2021 Vehicle scale Power Semiconductor Technology Summit Forum
The 2021 Power Semiconductor Technology Summit Forum was successfully concluded
From April 12th to 13th, sponsored by Wangcai New Media, supported by Shanghai Jiading Economic Development Service Co., LTD., and guided by Shanghai Microtechnology Industry Research Institute, the "2021CIAS China International New Generation of Automotive Power Semiconductor Technology Summit Forum" was held in Shanghai Jiading Sheraton Hotel.
On the morning of April 12th
Business negotiation & Free exhibition
On the afternoon of April 12th
Innovative applications and requirements iteration session
On the afternoon of April 12, the summit Forum officially kicked off with the speech of Sun Jianfeng, deputy general manager of Shanghai Jiading Asset Management (Group) Co., LTD.
Later, Chen Bao, founder of Wangcai New Media, delivered a speech on stage.
Excellent speech by guest
Guest: Zhang Bajiang, General Manager of Shanghai Jiading Economic Development Service Co., LTD
Topic: Introduction of Smart Sensor and Internet of Things Industry in Jiading District
There are more than 600 key enterprises in the semiconductor industry in Shanghai, employing more than 200,000 people, gathering about 40% of the industrial talents in the country. At present, Shanghai semiconductor industry has become the country's "most complete industrial chain, the highest industrial concentration, the strongest comprehensive technical ability" region, forming a "one and two wings" development layout.
Jiading First Wing focuses on gathering artificial intelligence chips, Internet of things chips, smart sensors, combined with the overall positioning and development goals, to create a Shanghai smart sensor industrial park with sufficient space, convenient transportation and perfect functions. To build a multi-cluster industrial ecological layout, with "one core and two regions" as the basic idea, the planning scope is 3 square kilometers.
A core: Jiading North intelligent sensor and intelligent hardware core comprehensive industrial cluster area. Based on the smart sensor industry, iot application is oriented. Two areas: Xuhang - Juyuan Intelligent manufacturing characteristic Cluster Area based on industrial control, intelligent manufacturing and innovation-oriented, Anting automotive electronics characteristic industrial cluster area. Based on automotive electronics, intelligent driving and traffic oriented. Finally, I hope more high-quality enterprises will settle in Jiading.
Guest: Chen Shihua, Deputy Secretary-General of China Association of Automobile Manufacturers
Topic: Operation and New Technology Trends of China's Automotive Industry
In the next six months or even nine months, the problem of mismatch and imbalance between supply and demand will continue to exist. It is expected that the supply of automotive chips will be tight and loose in 2021, and the most tense period will appear in the second quarter, and the end of the third quarter will begin to ease.
Under the rapid promotion of new energy vehicles and the continuous development of intelligent vehicles, the automotive semiconductor market will maintain rapid growth, it is worth noting that the current import rate of China's automotive chips reached 95%, the domestic self-supply rate is less than 5%, and the development space of domestic automotive chip manufacturers is huge.
At present, the semiconductor industry for the automotive business, the automotive industry for automotive chips are not enough attention, not fully realize the importance of the automotive industry market and the future broad development potential, the two industries need to strengthen cooperation in the future, collaborative innovation and development.
Guest: Yu Anbo, Vice President of Research and Development of Sunshine Electric Power
Topic:"Application of discrete SIC devices in electric drive system"
Why choose discrete SiC devices in parallel? Because Oems choose discrete device drivers have many benefits, the first reason to choose discrete devices is: supply chain security; The same specifications of the product, the performance parameters are basically the same, can be Pin-to-Pin compatible and shared, the packaging process is simple, high yield.
The second reason is that the parallel use of discrete devices can achieve platformization, achieve flexible expansion of power, a product, the number of different devices in parallel, to achieve different power needs. It can also avoid the inflated cost of large horse-drawn cars.
In addition, pure electric models, often by changing the battery power to do different configurations, by whether to increase the front drive to achieve different power configurations. The reason is that the current of its electric drive cannot be flexibly configured, and it cannot achieve different power configurations of 1.6/1.8/2.0/2.5. However, when the discrete device parallel driver is used, the platform product can easily realize the different power configuration of the vehicle by using the number of different discrete devices in parallel.
The third reason is that the use of discrete devices in parallel, you need to use the stacked busbar, the sunlight design its own busbar, can achieve >95% of the coincidence, so that the bus capacitor - stacked busbar + single tube, the stray inductance of the entire loop is less than 4nH, so that the IGBT or SIC switching process, short circuit process peak voltage is very low, far less than the module. This also makes the discrete device parallel driver EMC performance at 30MHz~1GHz radiation is relatively easy to meet the requirements of regulations. At present, Sunshine has batches of discrete device products, all meet the on-load Class 3, and some indicators reach Class 5.
Guest: Infineon Head of Vehicle Motion Segment
Zhong Xiaolong
Topic: "Automotive grade Silicon Carbide Technology, Application and Market of Infineon"
Infineon has more than 25 years of experience in the silicon carbide field, and the guests focused on Infineon's current range of automotive products, with more than 20 electric vehicle platforms in production using its HybridPACK™ Drive as of 2020. Shipments exceeded 1 million, and more than 10 new vehicle platforms in mass production are expected to be used in the next two years.
Guest: Yang Cao, Sales Director of Megmet New Energy Automobile Division
Topic: Development and Application of OBC and Electric Drive System for New Energy Vehicles
Shenzhen Magmet Electric Co., Ltd. was founded in 2003, the core technology is mainly power electronics + industrial control, the company's new energy products include: main drive motor controller, hybrid ISG and BSG controller, OBC, DCDC, all-in-one drive and high voltage assembly, automotive electric compressor controller, charging pile power module.
OBC&DCDC reliability design includes unit modularization, selection of components, control of key devices, derating design, thermal design, tolerance design, redundancy design, mechanical shock damping design, FMEA,FTA, simulation and so on.
Guest: Zhu Wenhui, Chairman of Changsha Anmuquan and doctoral supervisor of Central South University
Topic: Technical Challenges of High Temperature and High Power IGBTs and Module Packaging
IGBT to higher power, smaller volume development, while requiring low working junction temperature, low switching loss, high efficiency and low thermal resistance, reliability problems are increasingly prominent, technology breakthrough has become the key to break foreign monopoly; The problems to be solved in the reliability of IGBT package include nano-silver sintered materials and processes, the application of third-generation semiconductor materials and process methods, and the application of micro-channel direct cooling technology. The application of microfluidic chip technology is still some time away. Double-sided micro-channel cooling can greatly reduce the chip temperature, and the application of third-generation semiconductor materials represented by SiC will further promote the realization of high performance.
Changsha An Muquan is located in Lugu Science and Technology Innovation and Entrepreneurship Park of Changsha High-tech Zone, close to several major design parks such as CLP Software Park/Xincheng Science and Technology Park. Focusing on advanced flip and SiP packaging, we provide rapid packaging services with the innovative paradigm of integrating multi-variety small batch and increased mass production with leading technology.
Guest: Zhu Huapeng, Business Manager of Automotive and Energy Division of Keysight Technology
Topic: "How to deal with the test challenges brought by Wide band gap devices to new energy vehicles"
For the test of power devices, Keysighter Technology provides a series of mature solutions, static parameter test solutions include B1506A power device analyzer (circuit design), 3KV/1500A and B1505A power device analyzer/curve tracer, 10KV/1500A, Designed for power device users and power device manufacturers. The dynamic parameter test system is mainly PD1500A test system.
The B1505A power device analyzer can perform A wide range of IV measurements up to 10 kV /1500 A; µΩ resistance measurement; CV measurement of high voltage bias; Pulse measurement (≥ 10µs); Variable temperature measurement: -50℃ -250 ℃; Easy to use EasyEXPERT test environment; Modular configuration with 10 slots for supporting modules.
The B1506A semiconductor analyzer is easy to use and fully automated, with a wide measurement range of 3kV / 1500A, automatic capacitance measurement with up to 3kV bias, power loss assessment, automatic temperature testing capability (-50 ° C to +250 ° C), and more.
Guest: Wu Lei, Deputy General Manager of Shanghai Rui Drive Technology Co., LTD
Topic: Seventh Generation IGBT Chip and IPM Smart Module
Shanghai Rui Drive Technology Co., LTD., which was incubated by Shanghai Microtechnology Industry Research Institute, was officially registered in 2019, and its headquarters is located in the Incubator of Microsystems Institute of the Chinese Academy of Sciences. The company's product technology revolves around FS-Trench micro-trenching-cutoff type, taking the 7th generation IGB technology as a starting point, and closely follows the technological pace of international leading enterprises such as Infineon. Committed to the rapid mass production and mass application of the 7th generation IGBT, the 7th generation IGBT has the characteristics of high power density, high reliability, small size, low loss and low system cost, which is the inevitable trend of the development of IGBT.
At present, the main products of the company are easy series, Econo series and HybridPack series. The module packaging technology is based on the cooperation results and experience between the Japanese technical team and Toyota and Denso.
On the morning of April 13th
Chip technology and cost reduction
The special moderator of the conference, Dr. Lu Min, Secretary General of the Wide Band Gap Semiconductor Alliance
Guest: Liu Ao, Senior Engineer of China Electrical Engineering 55th Institute
Topic: "Technological Progress and Challenges of automotive SIC Chips"
Compared with Si IGBT, SiC MOSFET has significant switching loss advantages and lower on-loss. Compared with Si MOSFET,SiC MOSFET has lower on-resistance than SI MOSFET, and the change in the whole temperature range is small. It is mainly used in car chargers, DC/DC (one-way/two-way), two-in-one car chargers (one-way/two-way), main inverter drives and other fields. SiC SBD is mainly used in the field of car charger PFC and car charger rectification.
International SiC power electronic device technology is in a period of rapid development, is rapidly promoting the mass application of electric vehicles and other fields, the traction of domestic electric vehicle enterprise users is the key to the rapid improvement of automotive SiC device technology.
The difficulties of the current technology include reducing the cost of the device, improving the comprehensive income of the system application, improving the product maturity, solving the reliability problems at the device level and the application side, establishing special packaging and driving technology, and giving full play to the performance advantages of the device.
Guest: Wen Yu, Director of Basic Semiconductor Automotive Industry
Topic: "Automotive grade Silicon Carbide Technology and Industry Progress"
Basic Semiconductor is a leader in China's third-generation semiconductor industry, committed to the research and development and industrialization of silicon carbide power devices, and its silicon carbide devices have been produced in 2018, leading the industry. Jointly build the "Third Generation Semi-conductor Materials and Devices R&D Center" with the Research Institute of Tsinghua University in Shenzhen.
The two core of the car gauge semiconductor are product design "high safety and high reliability" and mass production "high stability", the design life of the product requires 15 years or 300,000 kilometers, the product design must meet the functional safety requirements, and the product requires "0" failure rate. Regarding consistency, it is necessary to have a special production line for vehicle regulations, strict quality control, and complete product traceability system management.
The process consistency of the diffusion process of the production of semiconductors is difficult to control, the performance of the product is easy to be discrete, and the early stage can only be completed by relying on aging and screening, and the automotive industry cannot achieve 100% aging and screening due to the large output, in view of the requirements of time and cost. The best way is to improve the process quality assurance ability, strict human, machine, material, law, and environment five elements to ensure consistency. The consistency of quality is the biggest difference between many domestic suppliers and well-known international suppliers.
Guest: Liao Yuanyuan, Vice President of CLP Shanghai Branch
Topic: "Start with the End, Lean Building-third-generation Semiconductor L-EPC Construction"
Throughout the development of China's integrated circuit industry, the protection of engineering construction enterprises is indispensable. China Electronic System Engineering Second Construction Co., Ltd. is the earliest large-scale central enterprise engaged in high-tech plant clean engineering since the founding of the People's Republic of China, and has grown into a high-tech construction project general contracting enterprise with full cycle service capability from project consulting, planning, design, implementation, procurement, commissioning to operation and maintenance, and is a domestic leader in the field of electronic engineering.
L-EPC, namely "Lean-EPC", LEAN EPC construction concept; L-EPC emphasizes: the combination of design and implementation, construction and technology; Features: Reduce the cost, shorten the duration, reduce the waste in the construction process of the project, improve the quality of the project, etc.
Guest: Yip Nianci, Technical Director of Xiamen SAN 'an Integration
Topic: Progress and Application of Manufacturing Technology of Large size Silicon Carbide Wafer Materials
SAN An Integrated is the world's third and China's first vertically integrated silicon carbide industry chain, its silicon carbide/gallium nitride wafer factory, 6 "wafers, will be mass produced in 2021, 8" wafers, will be mass produced in 2023.
From the technical point of view, silicon carbide SBD iteration direction:
1. Technical iteration path SBD→JBS→MPS to improve device robustness; 2. Smaller chip area, optimized impurity concentration and silicon carbide substrate thinning; 3. Manufacturing technology adapted to the requirements of the automotive industry.
Silicon carbide MOS iteration direction:
1. Smaller chip area to optimize flat or channeled devices;
2. High reliability, grid-oxygen medium optimization and gold-oxygen half-interface processing;
3. Manufacturing technology adapted to the requirements of the automotive industry.
The electric vehicle industry stands on the air, as the core device material of silicon carbide substrate demand gap is huge, high quality, low cost is the inevitable way of silicon carbide substrate.
Guest: Yang Mulong, Product Director of NAURA CVD Division
Topic: "Domestic silicon carbide substrate equipment development characteristics"
The fabrication process of SiC power device mainly includes: crystal growth → wafer processing → epitaxial growth → device technology → device packaging, etc. The technical difficulties and cost distribution of SiC devices are mainly in the substrate and epitaxy part, accounting for more than 50%, so the cost reduction and quality improvement of SiC single crystals and epitaxy are the key to the large-scale application of SiC devices.
Naura has more than 10 years of technology accumulation in the field of SiC substrate equipment, and can provide help for the SiC industry in high-performance equipment, process technology research and development, cost control and other aspects. It's from NAuraSiC long crystal furnace and SiC epitaxial furnaceIt has helped more than 10 domestic SiC customers and promoted the accelerated promotion and application of domestic SiC devices.
PVT (sublimation method), HTCVD (high temperature CVD) and LPE (liquid phase method) are the three common SiC crystal growth methods. The most recognized method in the industry is the PVT method, and more than 95% of SiC single crystals are grown by PVT method; Naura industrialization of SiC long crystal furnace, using the industry's mainstream PVT method technical route.
Naurac has customized and developed two SiC long crystal furnace products according to crystal categories: APS 180GN: For large-scale N-type conductive SiC crystal development, focusing on formula automation control and mass production control; APS 180G Plus: Compatible with N-type conductive and high-purity semi-insulated SiC crystals, it has an advantage in high-purity research and development.
Guest: SMIC Manufacturing (Shaoxing) Co., LTD SMEC
Technology research and development and marketing EVP Liu Xuanjie
Topic: "Prospects and Challenges of Automotive Power Semiconductor Manufacturing in China"
In the conversion from traditional vehicles to new energy vehicles, power semiconductors are the largest increment and the largest total amount. CAGR of about 21% from 2018 to 2024. With the progress of intelligent networking, other varieties may also grow further, very low domestic autonomy rate is the status quo, modular power devices occupy a dominant position in automotive power devices, SiC discrete devices will also grow significantly, how to build China's local automotive electronics R & D manufacturing ecological chain is a major issue in the next decade, However, the current situation and urgency of China's industrial development will inevitably make China's industrial chain more dependent on vertical division of labor.
Smic Shaoxing focuses on sensing, connection and power of the characteristic semiconductor system foundry services, providing design services, wafer manufacturing, module packaging one-stop services.
Smic Shaoxing will launch SiC and GaN power devices in 2020, focusing on automotive and consumer applications respectively. Smic Shaoxing has a complete product line layout, based on vehicle products, compatible with industrial and consumer categories, a complete power module production line from housing to molding, supporting silver sintering, all-copper process, epoxy pot sealing, from DFN to QFN discrete device packaging, supporting all-copper Clip, Flip Clip.
The afternoon of April 13th
Module advanced design and cooling interconnect solution special session
Guest: Liu Weixing, chief expert of United automotive electronic inverter development
Topic: Motor Controller based on SiC Technology
United Electronics developed a SiC inverter sample in 2017, after testing and verification, compared with Si inverter performance has been greatly improved, the volume has been reduced to 3.3L, the power density has been increased to 40.3kw/L, and the peak efficiency can reach 99.4%.
SiC inverter has a series of advantages such as high efficiency, high power density, high efficiency, high temperature resistance, but the batch application also faces many challenges, SiC Substate production technology is difficult, fewer suppliers, the overall output is low, resulting in high chip raw material prices. In addition, most of the current mainstream packages still borrow the packaging concept of Si IGBT, resulting in the characteristics of SiC can not be fully played. Compared with Si chip, the chip area of SiC chip is smaller, the dissipation power tolerance of a single chip is reduced, the protection response speed is faster, and the corresponding circuit design is more difficult.
With the development of new energy vehicles, Oems have higher and higher requirements for EMC levels, and inverters are required to further improve the EMC level of the inverter system under the premise of integrating SiC new technology.
Guest: Tong Wu, Chief Silicon carbide application expert of ON Semiconductor
Topic: Thermal Management of Silicon Carbide Power Modules
Wide band gap devices are rapidly being accepted by the market, but there are still three pain points that need to be solved before large-scale use!
Pain point 1: The need for large-scale production of wide band gap material chips, and reduce costs;
Pain point 2: New packaging technology to cope with high temperature and high voltage operating environments. Need more advanced design and processing technology;
Pain point 3: System integration upgrade, can not simply use the system for silicon-based devices. It is necessary to design more complex drive systems for wide bandgap devices and integrate more functions to achieve optimal performance.
Only by solving the above pain points can the third generation semiconductor be fully utilized.
Guest: Dr. Jiang Nan from Guangdong Nengxin Semiconductor Technology Co., LTD
Topic: "The Collaborative development of Vehicle gauge level Test Standards and Power device Packaging"
As a well-known testing service platform for third-party power semiconductor devices, Guangdong NENchip Semiconductor Technology Co., Ltd. was established in June 2019 in Foshan, Guangdong Province, and is a third-party power semiconductor device testing service platform held by Guangdong Academy of Sciences.
The existing laboratory area of Guangdong Energy Core is more than 900 square meters, with a complete range of reliability test equipment and analytical instruments, which can fully support the -AQG-324 power semiconductor module and part of the AEC-Q101 power semiconductor single tube reliability test standards. Including high and low temperature shock, mechanical vibration and other environmental aging test, HTRB/HTGB/H3TRB and other on-line aging test, power cycle test, dynamic and static/insulation voltage resistance/thermal resistance and other device parameters testing, as well as ultrasonic scanning detection.
Guest: Yao Wei, R&D Manager of Semiconductor Materials, Henkel Electronic Materials Division
Topic: "Henkel Thermal Chip Bonding Solution - sintered silver Technology"
Henkel's product line of semi-sintered materials includes ABP 8068TA, ABP 8068TB, ABP 8068T1 and ABP 8068TD, among which the ABP 8068TD products can be bonded to a variety of copper frames, suitable for bonding bare silicon and back metal chips, with high reliability. It can meet 〖5*5mm〗^2 MSL1.
Guest: Liang Xiaoguang, founder of Wuxi Lipps Conductor Co., LTD
Topic: "Solving heat dissipation and reliability problems caused by the power density increase of silicon carbide modules"
Due to the epidemic, Liang was in Japan to deliver a speech with the conference site, which was full of dry goods. Wuxi Lipps Semiconductor Co., Ltd. is headquartered in Wuxi, Jiangsu Province, and has set up a wholly-owned subsidiary in Japan as a research and development center. It is a high-tech enterprise focusing on the design, production and sales of SiC and IGBT modules.
Lipps brings together experienced professionals from home and abroad, including wafer process and device design, module packaging design, product application, marketing and product operation, etc. The products mainly focus on high-performance and high-reliability SiC and IGBT modules. The products are used in new energy vehicles, charging piles, industrial frequency conversion, photovoltaic inverter, motor drive, medical equipment, power supply and other scenarios and fields.
Lipps mainly uses advanced packaging materials and processing technologies, and is committed to providing complete module application solutions for the miniaturization, high efficiency and lightweight of controllers to meet the needs of high-performance, high-reliability new energy vehicles and high-end industrial power semiconductor modules.
Lipps is committed to becoming a leader in silicon carbide module technology, contributing to human and social progress by bringing more valuable products through continuous innovation.
The conference will take a group photo behind closed doors
Live highlights
The 2021CIAS China International New Generation of Automotive scale Power Semiconductor Technology Summit Forum ended successfully in the applause of the participants! Thank you for your sharing and valuable opinions. The technological development of the power semiconductor industry requires enterprises and industry personnel to constantly exchange and innovate for mutual benefit and win-win! The conference strengthened industrial technology cooperation and promoted supply and demand cooperation between power semiconductor companies, vehicle companies, and equipment companies. Wangcai New Media will also continue to work hard, constantly innovate, to bring a better technical exchange platform for the industry! Thank Shanghai Jiading Economic Development Service Co., Ltd. for the special support! Thank you to Hefei Sunshine Electric Power Technology Co., LTD., SMIC Manufacturing (Shaoxing) Co., LTD., Beijing Nault Microelectronics Equipment Co., LTD., China Electronic System Engineering Second Construction Co., LTD., Keitel Technology (China) Co., LTD., Guangdong Nengxin Semiconductor Technology Co., LTD., Jiyong Commercial Co., LTD., Dazu Laser Display and Semiconductor Equipment Division, and IMPLatin Scientific Instruments (Shanghai) Co., LTD., Shaanxi Kelvin Measurement and Control Technology Co., LTD., Hangzhou Gaokun Electronic Technology Co., LTD., Henkel (China) Investment Co., LTD., Shanghai Shengjian Environmental System Technology Co., LTD., Shanghai Xuantian Industrial Equipment Co., LTD., Hefei Kewell Power System Co., LTD., Beijing Huazhuo Precision Technology Co., LTD., Beijing Oriental Zhongke Sponsored by Integrated Technology Co., LTD.!